gate voltage

The variation of suppression-factors with source-drain voltage, gate voltage, temperature and source-drain doping are investigated.

在此基础上，对各抑制因子随源漏电压、栅极电压、温度及源漏掺杂浓度的变化特性进行了研究。

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slowly-drop gate voltage and softly turn-off principles are explained in this article, specific parameters are also listed.

阐述了软降栅压和软关断的过电流保护原理，列出具体的保护时序参数。

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the appropriate spectrum for 6 a peak drain-current, 13 v gate voltage and 380 v drain-source voltage has been chosen as reference.

为在峰值6安培漏极电流下获得适当的频谱，选择13伏特的栅源极电压和380伏特的漏源极电压为参考。

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v vgd non-triggering gate voltage

门极不触发电压

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luminescence intensity increased, but the role of the gate voltage to control current is not ideal.

器件的发光强度有所提高，但栅压对载流子的控制作用不理想。

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fig. 13 shows that a change of the gate voltage from 10v to 15v hardly influences the spectrum.

图13展示出栅源极电压从10伏特到15伏特变化几乎不对干扰频谱产生影响。

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erasing the memory devices can include applying a gate voltage to the wordlines and applying a bias voltage to the dummy wordlines.

存储装置的擦除可包含：施加栅极电压至字线且施加偏压至虚拟字线。

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the emission current density at the apex was found to be the highest, depending exponentially on the gate voltage.

电流密度在纳米线顶端边缘处最大，而且随着栅极电压的增加而呈指数增加。

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